Transfer of a monolayer of chemical-vapor-deposition (CVD) grown graphene from one substrate to another normally requires a transfer agent. This transfer agent will subsequently be washed away with an organic solvent in a process that can potentially destroy the structural integrity of a graphene film, particularly, a graphene film occupying a large area. To bypass this washing step, we have successfully used camphor for transferring a monolayer of graphene to a target dielectric substrate over an area in excess of 10 mm2. A layer of camphor was first deposited either by spin coating or drop coating onto a graphene layer that had been grown onto a copper surface by CVD. The copper substrate was then etched away, whilst the remaining camphor/graphene bilayer was placed onto a SiO2/Si substrate. Finally, the camphor remaining on the camphor/graphene/SiO2/Si was sublimed into a vapor. The graphene/SiO2 stack was then examined by microscopic characterization, spectral characterization and electrical characterization. The results of our examination suggest that the proposed method can guarantee a clean and damage-free graphene transfer. The graphene film fabricated on a SiO2/Si using the proposed method is superior in structural quality to the graphene obtained via other polymer mediated methods. In the case of a large area graphene, an average sheet resistance of approximately 360-1000 Ohm per square was observed.
Comments: 23 Pages. Submitted to JCIS: Ms. No.: JCIS-18-5865
[v1] 2018-11-01 23:11:35
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