ZnO thin films with the thickness of about 15nm on (0001) substrates were prepared by pulsed laser deposition. X-ray photoelectron spectroscopy indicated that both as grown and then annealed ZnO thin films were oxygen rich. Hydrogen (H2) sensing measurements of the films indicated that the conductivity type of both the unannealed and annealed ZnO films converted from p-type to n-type in process of increasing the operating temperature. However, the two films showed different conversion temperatures. The origin of the p-type conductivity in the unannealed and annealed ZnO films should be attributed to oxygen related defects and Zinc vacancies related defects, respectively. The conversion of the conductivity type was due to the annealing out of the correlated defects. Moreover, p-type ZnO films can work at lower temperature than n-type ZnO films without obvious sensitivity loss.
Comments: 10 Pages.
[v1] 2014-05-07 03:58:11
Unique-IP document downloads: 136 times
Vixra.org is a pre-print repository rather than a journal. Articles hosted may not yet have been verified by peer-review and should be treated as preliminary. In particular, anything that appears to include financial or legal advice or proposed medical treatments should be treated with due caution. Vixra.org will not be responsible for any consequences of actions that result from any form of use of any documents on this website.
Add your own feedback and questions here:
You are equally welcome to be positive or negative about any paper but please be polite. If you are being critical you must mention at least one specific error, otherwise your comment will be deleted as unhelpful.