Digital Signal Processing


Numerical Modeling of Series Resistance of Millimeter- wave DDR IMPATTs

Authors: Aritra Acharyya1, J. P. Banerjee

This paper describes a computer-based method to calculate the parasitic positive series resistance of millimeter-wave packaged DDR IMPATT devices from high-frequency small-signal conductance-susceptance characteristics. The series resistance of the device can be obtained at the threshold condition when the small-signal conductance of the packaged device just becomes negative and the susceptance becomes positive. Series resistance values are determined for two DDR Silicon IMPATT diodes designed to operate at W-band near 94 GHz window frequency using the method developed by the author’s.

Comments: 10 Pages.

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Submission history

[v1] 2012-08-19 02:06:06

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