This paper describes a computer-based method to calculate the parasitic positive series resistance of millimeter-wave packaged DDR IMPATT devices from high-frequency small-signal conductance-susceptance characteristics. The series resistance of the device can be obtained at the threshold condition when the small-signal conductance of the packaged device just becomes negative and the susceptance becomes positive. Series resistance values are determined for two DDR Silicon IMPATT diodes designed to operate at W-band near 94 GHz window frequency using the method developed by the author’s.
Comments: 10 Pages.
[v1] 2012-08-19 02:06:06
Unique-IP document downloads: 160 times
Add your own feedback and questions here:
You are equally welcome to be positive or negative about any paper but please be polite. If you are being critical you must mention at least one specific error, otherwise your comment will be deleted as unhelpful.