Condensed Matter

1711 Submissions

[2] viXra:1711.0467 [pdf] replaced on 2017-12-18 06:19:26

Report of Simulation Investigations, Part II, a Growth of Half-Chaotic Autonomous Networks

Authors: Andrzej Gecow
Comments: 41 pages. v1 - in Polish, v2 - in English, part I -

In the first part: “Report of simulation investigations, a base of statement that life evolves in half-chaos” networks have constant structure. Deviations from their randomness are found in correlations of states and functions of nodes, the change initiating the damage consists of a small change in the node function. Here we also come from the point attractor, but the initiation change is a random addition or removing the node. The networks grow and in them also half-chaos occurs, which is an important complement to the arguments found in the part I. Now structure is changed and the evolution with the condition of a small change keeping the half-chaos creates structural tendencies such as the greater conservativeness of the older nodes. The classic modularity, its source and its connection to ro-modularity are also found.
Category: Condensed Matter

[1] viXra:1711.0453 [pdf] submitted on 2017-11-27 13:28:19

On the Reproducibility of Ultra-Intense Terahertz Experiments: Comment on “Sub-Cycle Insulator-to-Metal Transition in Vanadium Dioxide by Terahertz-Field-Driven Tunneling” by Giorgianni, Vicario,.. and Hauri (Arxiv:1706.00616)

Authors: Mostafa Shalaby
Comments: 3 Pages.

The manuscript by Giorgianni et al [1], and co-authored by myself, claims and concludes on a purely electronic insulator to metal transition (IMT) in VO2 using ultra-intense THz fields without any lattice interaction. The underlying mechanism behind IMT in VO2 is a highly debatable subject with the “electron-only” IMT concept being increasingly resisted in the field especially under intense excitations. If Giorgianni/Hauri’s claim were sustained, it would be an important step towards fundamental understanding of complex systems such as the model VO2 [2-4] and may have implications on low power ultrafast switching applications. The experiment was enabled by the uniquely-intense THz source I previously developed at the SwissFEL [5, 6] and is thus not possible to reproduce elsewhere under similar excitation conditions. However, some of the measurements under the reported experimental settings showed clear phonon oscillations on the short time scale, and sample damage using the maximum reported field intensities, which may be contradicting the purely electronic/non-phonon paper claims/conclusions. These measurements were known to all PSI authors (Feb./March 2017) before the paper was drafted. However, the principal authors (Giorgianni, Vicario, and Hauri) 1 decided to exclude these measurements from the paper, disapproved the call to further repeat and verify the paper measurements, and submitted it. They then publically published the text on the arXiv without the consent of all the authors. The external co-authors (from U.C. Berkeley, USA, and Tsinghua U., China) requested the addition of the note “We (Kai Liu, Junqiao Wu and Kevin Wang) were unaware of the situation, of the hidden data, and of the PSI disagreements, and we have never been contacted or informed of any of these issues. We merely provided the samples.”† The experiment was performed at a SwissFEL laboratory, but not the experimental user laboratories. This comment should not lay responsibility on the SwissFEL facility. PSI attempted to withdraw the submission, but the arXiv is non-retractable.2
Category: Condensed Matter