Authors: O.I. Velichko
A theory describing the processes of atomic diffusion in a nonequilibrium state with nonuniform distributions of components in a defect-impurity system of silicon crystals is proposed. Based on this theory, partial diffusion models are constructed and simulation of a large number of experimental data is curried out. A comparison of the simulation results with the experiments confirms the correctness and importance of the theory developed. The book will useful for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. Practical application of the theoretical ideas formulated in the book allows finding cheaper solutions in the manufacturing of semiconductor devices and integrated microcircuits.
Comments: In English, 215 pages, 91 figures, 556 references, Contents and Preliminary
[v1] 2018-05-13 10:06:51
Unique-IP document downloads: 8 times
Vixra.org is a pre-print repository rather than a journal. Articles hosted may not yet have been verified by peer-review and should be treated as preliminary. In particular, anything that appears to include financial or legal advice or proposed medical treatments should be treated with due caution. Vixra.org will not be responsible for any consequences of actions that result from any form of use of any documents on this website.
Add your own feedback and questions here:
You are equally welcome to be positive or negative about any paper but please be polite. If you are being critical you must mention at least one specific error, otherwise your comment will be deleted as unhelpful.