Authors: Blaise Mouttet
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction
Comments: 5 Pages.
[v1] 2012-05-03 08:51:54
Unique-IP document downloads: 128 times
Add your own feedback and questions here:
You are equally welcome to be positive or negative about any paper but please be polite. If you are being critical you must mention at least one specific error, otherwise your comment will be deleted as unhelpful.