Condensed Matter

   

Dynamic Systems Model for Filamentary Memresistors

Authors: Blaise Mouttet

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction

Comments: 5 Pages.

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Submission history

[v1] 2012-05-03 08:51:54

Unique-IP document downloads: 132 times

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