Condensed Matter


Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

Authors: Blaise Mouttet

A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM

Comments: 5 Pages.

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Submission history

[v1] 2012-05-03 08:57:16

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